EDAC: Fix typos in comments

Fix the following typos:

'Alocate' ==> 'Allocate',
'specifed' ==> 'specified',
'Technlogy' ==> 'Technology',
'Brnach' ==> 'Branch',
'branchs' ==> 'branches'.

Signed-off-by: Yan Zhen <yanzhen@vivo.com>
Signed-off-by: Borislav Petkov (AMD) <bp@alien8.de>
Link: https://lore.kernel.org/r/20240930074023.618110-1-yanzhen@vivo.com

Author: Yan Zhen

drivers/edac/edac_mc.c

@@ -214,7 +214,7 @@ static int edac_mc_alloc_csrows(struct mem_ctl_info *mci)
 	unsigned int row, chn;
 
 	/*
-	 * Alocate and fill the csrow/channels structs
+	 * Allocate and fill the csrow/channels structs
 	 */
 	mci->csrows = kcalloc(tot_csrows, sizeof(*mci->csrows), GFP_KERNEL);
 	if (!mci->csrows)

drivers/edac/edac_mc_sysfs.c

@@ -422,7 +422,7 @@ static inline int nr_pages_per_csrow(struct csrow_info *csrow)
 	return nr_pages;
 }
 
-/* Create a CSROW object under specifed edac_mc_device */
+/* Create a CSROW object under specified edac_mc_device */
 static int edac_create_csrow_object(struct mem_ctl_info *mci,
 				    struct csrow_info *csrow, int index)
 {
@@ -449,7 +449,7 @@ static int edac_create_csrow_object(struct mem_ctl_info *mci,
 	return 0;
 }
 
-/* Create a CSROW object under specifed edac_mc_device */
+/* Create a CSROW object under specified edac_mc_device */
 static int edac_create_csrow_objects(struct mem_ctl_info *mci)
 {
 	int err, i;
@@ -636,7 +636,7 @@ static void dimm_release(struct device *dev)
 	 */
 }
 
-/* Create a DIMM object under specifed memory controller device */
+/* Create a DIMM object under specified memory controller device */
 static int edac_create_dimm_object(struct mem_ctl_info *mci,
 				   struct dimm_info *dimm)
 {

drivers/edac/i5000_edac.c

@@ -338,11 +338,11 @@ struct i5000_pvt {
 
 	u16 mir0, mir1, mir2;
 
-	u16 b0_mtr[NUM_MTRS];	/* Memory Technlogy Reg */
+	u16 b0_mtr[NUM_MTRS];	/* Memory Technology Reg */
 	u16 b0_ambpresent0;	/* Branch 0, Channel 0 */
-	u16 b0_ambpresent1;	/* Brnach 0, Channel 1 */
+	u16 b0_ambpresent1;	/* Branch 0, Channel 1 */
 
-	u16 b1_mtr[NUM_MTRS];	/* Memory Technlogy Reg */
+	u16 b1_mtr[NUM_MTRS];	/* Memory Technology Reg */
 	u16 b1_ambpresent0;	/* Branch 1, Channel 8 */
 	u16 b1_ambpresent1;	/* Branch 1, Channel 1 */
 
@@ -1210,7 +1210,7 @@ static void i5000_get_mc_regs(struct mem_ctl_info *mci)
 			&pvt->b0_ambpresent1);
 	edac_dbg(2, "\t\tAMB-Branch 0-present1 0x%x:\n", pvt->b0_ambpresent1);
 
-	/* Only if we have 2 branchs (4 channels) */
+	/* Only if we have 2 branches (4 channels) */
 	if (pvt->maxch < CHANNELS_PER_BRANCH) {
 		pvt->b1_ambpresent0 = 0;
 		pvt->b1_ambpresent1 = 0;